PASCO Hall Effect n-doped Germanium

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SKU: SE-7260 Category: Tag:

Description

Product Summary

The Hall Effect experiment (conducted by Edwin Hall in 1879) determines the sign of the charge carriers in current flow. A current can be thought of as a negative charge moving in one direction or as a positive charge moving in the opposite direction. To determine which it actually is, the semiconductor is immersed in the magnetic field transverse to the direction of flow of current. The moving charge experiences a force, causing a charge build-up on one side of the semiconductor (creating an electric field), which in turn leads to a force. The direction of the electric field will depend on the sign of the charge carriers and the polarity of the Hall voltage across the semiconductor reveals this sign.

The magnitude of the Hall voltage is dependent on the current, the charge carrier density, and the magnitude of the magnetic field. In modern-day electronics, the Hall Effect is used to measure the magnitude and direction of magnetic fields.

PASCO Advantage: The open design of this Hall Effect apparatus makes it possible for students to see the direction of the current and the magnetic field, enabling them to use the sign of the Hall voltage to deduce the sign of the charge carriers.

What’s Included

  • 1x Hall Probe Unit, n-Semiconductor (GaAs)
  • 1x Hall Effect Power Supply
  • 1x U-Core Electromagnetic Coil
  • 1x Track, Length 40 cm
  • 2x Optical Carrier
  • 2x Adjustable Post Holder with 9 cm Post
  • 6x Banana Cords
  • 2x Connecting Cables for 550/850 Interface
  • 1x Manual

Product Specifications

n-Doped Semiconductor Material GaAs
Hall Sensitivity ≥150 mV/(mA·T)
Magnet Space 10 mm
U-core Electromagnetic Coil 1000 Turns
Magnet Field 0 to 0.065 T (at 1A)
Excitation Current 0 to 1 A DC
Hall Voltage 0 to 1.9999 V
Power Supply Digital Readout Current, Hall Voltage, and Magnet Current

Supporting Documents

Manuals
Hall Effect Experiment Manual English 1.54 MB